Light irradiation type heat treatment method and heat treatment apparatus

ABSTRACT

A metal film is deposited on a front surface of a semiconductor wafer of silicon. After the semiconductor wafer is received in a chamber, the pressure in the chamber is reduced to a pressure lower than atmospheric pressure. Thereafter, nitrogen gas is supplied into the chamber to return the pressure in the chamber to ordinary pressure, and the front surface of the semiconductor wafer is irradiated with a flash of light, so that a silicide that is a compound of the metal film and silicon is formed. The oxygen concentration in the chamber is significantly lowered during the formation of the silicide because the pressure in the chamber is reduced once to the pressure lower than atmospheric pressure and then returned to the ordinary pressure. This suppresses the increase in resistance of the silicide resulting from the entry of oxygen in the atmosphere in the chamber into defects near the interface between the metal film and a base material.

CROSS-REFERENCE TO RELATED APPLICATIONS

The present application is a continuation of U.S. patent applicationSer. No. 15/648,634, filed Jul. 13, 2017, by Takayuki AOYAMA, HikaruKAWARAZAKI, Masashi FURUKAWA, Kazuhiko FUSE, Hideaki TANIMURA andShinichi KATO, entitled “LIGHT IRRADIATION TYPE HEAT TREATMENT METHODAND HEAT TREATMENT APPARATUS,” which is a divisional of U.S. patentapplication Ser. No. 15/242,709, filed Aug. 22, 2016, now U.S. Pat. No.9,741,576, issued Aug. 22, 2017, which claims priority to JapanesePatent Application Nos. 2015-166512, filed Aug. 26, 2015 and2016-103567, filed May 24, 2016. The entire contents of each of thesepatent applications are incorporated herein by reference.

BACKGROUND OF THE INVENTION Field of the Invention

The present invention relates to a heat treatment method and a heattreatment apparatus which irradiate a thin plate-like precisionelectronic substrate (hereinafter referred to simply as a “substrate”)of silicon or silicon-germanium such as a semiconductor wafer with aflash of light to form a silicide or a germanide.

Description of the Background Art

In the process of manufacturing a semiconductor device, attention hasbeen given to flash lamp annealing (FLA) which heats a semiconductorwafer in an extremely short time. The flash lamp annealing is a heattreatment technique in which xenon flash lamps (the term “flash lamp” asused hereinafter refers to a “xenon flash lamp”) are used to irradiate asurface of a semiconductor wafer with a flash of light, thereby raisingthe temperature of only the surface of the semiconductor wafer in anextremely short time (several milliseconds or less).

The xenon flash lamps have a spectral distribution of radiation rangingfrom ultraviolet to near-infrared regions. The wavelength of lightemitted from the xenon flash lamps is shorter than that of light emittedfrom conventional halogen lamps, and approximately coincides with afundamental absorption band of a silicon semiconductor wafer. Thus, whena semiconductor wafer is irradiated with a flash of light emitted fromthe xenon flash lamps, the temperature of the semiconductor wafer can beraised rapidly, with only a small amount of light transmitted throughthe semiconductor wafer. Also, it has turned out that flash irradiation,that is, the irradiation of a semiconductor wafer with a flash of lightin an extremely short time of several milliseconds or less allows aselective temperature rise only near the surface of the semiconductorwafer.

Such flash lamp annealing is used for processes that require heating inan extremely short time, for example, typically for the activation ofimpurities implanted in a semiconductor wafer. The irradiation of asurface of a semiconductor wafer implanted with impurities by an ionimplantation process with a flash of light from flash lamps allows thetemperature rise to an activation temperature only in the surface of thesemiconductor wafer in an extremely short time, thereby achieving onlythe activation of impurities without deep diffusion of the impurities.

It has also been under consideration to apply the flash lamp annealingto the formation of silicides in field-effect transistors (FETs). Thesilicide formation is a technique that forms compounds (silicides) ofsilicon with metals for the purpose of increasing the performance of thefield-effect transistors. The formation of silicides reduces resistancesin gates and source/drain regions to achieve the high-speed operation ofthe field-effect transistors. Examples of the metals that form silicideswhich are under consideration include nickel (Ni), cobalt (Co), andtitanium (Ti). In particular, nickel is promising as the most suitablematerial for finer geometries.

The silicide formation is achieved by depositing a film of metal such asnickel on source/drain regions of a semiconductor wafer and thenperforming a heating treatment on the semiconductor wafer. At this time,when the heating treatment is performed for a long time, the silicideabnormally grows laterally (in a direction from the source/drain regionsto the gate) to break through source/drain junctions, thereby givingrise to a problem such that leakage current increases rapidly. Toovercome such a problem, it has been proposed, for example, in U.S.Patent Application Publication No. 2013/0078802 to perform a heatingtreatment in a short time by irradiating a surface of a semiconductorwafer with a metal film deposited thereon with a flash of light.

Unfortunately, it has turned out that the characteristics of aninterface between the silicide and silicon of a base layer are degradedto cause an increase in resistance if only a flash heating treatment isperformed in an extremely short time by merely irradiating asemiconductor wafer with a metal film deposited thereon with a flash oflight as disclosed in U.S. Patent Application Publication No.2013/0078802. Devices that will become much finer in geometries in thefuture are more subjected to the influence of oxygen because thesilicides in the devices are reduced in thickness. It is also necessaryto suppress the oxidation of the silicides after the formation of thesilicides because the silicides themselves are easily susceptible tooxidation.

The degradation of the interface characteristics of the silicides andthe oxidation of the silicides themselves are caused by the heatingtreatment in the presence of oxygen. Oxygen that causes these problemsmainly includes residual oxygen in a chamber and oxygen adsorbed on thesurface of the semiconductor wafer (mainly adsorbed in the form ofwater). In particular, oxygen remaining in the chamber during the flashheating treatment becomes a big factor in the increase in the thicknessof a silicon oxide film. In general, semiconductor wafers aretransported into and out of a chamber at ordinary pressure in a flashlamp annealer. Oxygen in the atmosphere flowing into the chamber duringthe transport remains in the chamber to increase the concentration ofoxygen.

SUMMARY OF THE INVENTION

The present invention is intended for a method of irradiating asubstrate with a flash of light to form a silicide or a germanide.

According to one aspect of the present invention, the method comprisesthe steps of: (a) transporting a substrate with a metal film depositedthereon into a chamber; (b) reducing the pressure in the chamber to afirst pressure lower than atmospheric pressure; (c) returning thepressure in the chamber from the first pressure to a second pressurehigher than the first pressure; and (d) irradiating a front surface ofthe substrate with a flash of light from a flash lamp while maintainingthe pressure in the chamber at the second pressure.

The method is capable of decreasing the oxygen concentration in thechamber during the irradiation with a flash of light to suppress theincrease in resistance of the silicide or germanide resulting from theentry of oxygen in the chamber into defects near the interface betweenthe metal film and a base material.

Preferably, the second pressure is higher than the first pressure andlower than atmospheric pressure.

This shortens the time required to return the pressure, therebyimproving a throughput.

Preferably, the second pressure is higher than atmospheric pressure.

This lowers the diffusion velocity of oxygen released from the chamberto restrain the oxygen from reaching the substrate.

Preferably, an exhaust flow rate from the chamber is increased with timein the step (b).

This prevents particles from swirling up due to the gas exhausted fromthe chamber.

Preferably, a supply flow rate to the chamber is increased with time inthe step (c).

This prevents particles from swirling up due to the gas supplied intothe chamber.

Preferably, an inert gas is caused to flow at a flow rate ranging from50 to 100 liters per minute in the chamber, with the pressure in thechamber maintained at atmospheric pressure, after the step (d).

This allows particles created at the time of flash irradiation to beswept away out of the chamber.

Preferably, an inert gas is supplied into the chamber while opening atransport opening of the chamber in the step (a).

This prevents air from flowing into the chamber during the transport ofthe substrate into the chamber.

According to another aspect of the present invention, the methodcomprises the steps of: (a) transporting a substrate with a metal filmdeposited thereon into a chamber; (b) reducing the pressure in thechamber to a first pressure lower than atmospheric pressure; and (c)irradiating a front surface of the substrate with a flash of light froma flash lamp while maintaining the pressure in the chamber at the firstpressure.

The method is capable of decreasing the oxygen concentration in thechamber during the irradiation with a flash of light to suppress theincrease in resistance of the silicide or germanide resulting from theentry of oxygen in the chamber into defects near the interface betweenthe metal film and a base material.

The present invention is also intended for a heat treatment apparatusfor irradiating a substrate with a flash of light to form a silicide ora germanide.

According to one aspect of the present invention, the heat treatmentapparatus comprises: a chamber for receiving therein a substrate with ametal film deposited thereon; a flash lamp for irradiating the substratereceived in the chamber with a flash of light; an exhaust part forexhausting an atmosphere from the chamber; a gas supply part forsupplying a predetermined treatment gas into the chamber; and acontroller for controlling the exhaust part and the gas supply part sothat a front surface of the substrate is irradiated with a flash oflight from the flash lamp while the pressure in the chamber is returnedto a second pressure after being reduced to a first pressure lower thanatmospheric pressure, the second pressure being higher than the firstpressure.

The heat treatment apparatus is capable of decreasing the oxygenconcentration in the chamber during the irradiation with a flash oflight to suppress the increase in resistance of the silicide orgermanide resulting from the entry of oxygen in the chamber into defectsnear the interface between the metal film and a base material.

Preferably, the second pressure is higher than the first pressure andlower than atmospheric pressure.

This shortens the time required to return the pressure, therebyimproving a throughput.

Preferably, the second pressure is higher than atmospheric pressure.

This lowers the diffusion velocity of oxygen released from the chamberto restrain the oxygen from reaching the substrate.

Preferably, the controller controls the exhaust part so that an exhaustflow rate from the chamber is increased with time when the pressure inthe chamber is reduced to the first pressure.

This prevents particles from swirling up due to the gas exhausted fromthe chamber.

Preferably, the controller controls the gas supply part so that a supplyflow rate to the chamber is increased with time when the pressure in thechamber is returned from the first pressure to the second pressure.

This prevents particles from swirling up due to the gas supplied intothe chamber.

Preferably, the controller controls the exhaust part and the gas supplypart so that an inert gas is caused to flow at a flow rate ranging from50 to 100 liters per minute in the chamber, with the pressure in thechamber maintained at atmospheric pressure, after the irradiation withthe flash of light.

This allows particles created at the time of flash irradiation to beswept away out of the chamber.

According to another aspect of the present invention, the heat treatmentapparatus comprises: a chamber for receiving therein a substrate with ametal film deposited thereon; a flash lamp for irradiating the substratereceived in the chamber with a flash of light; an exhaust part forexhausting an atmosphere from the chamber; a gas supply part forsupplying a predetermined treatment gas into the chamber; and acontroller for controlling the exhaust part and the gas supply part sothat a front surface of the substrate is irradiated with a flash oflight from the flash lamp while the pressure in the chamber ismaintained at a first pressure lower than atmospheric pressure afterbeing reduced to the first pressure.

The heat treatment apparatus is capable of decreasing the oxygenconcentration in the chamber during the irradiation with a flash oflight to suppress the increase in resistance of the silicide orgermanide resulting from the entry of oxygen in the chamber into defectsnear the interface between the metal film and a base material.

It is therefore an object of the present invention to suppress anincrease in resistance of silicides and the like.

These and other objects, features, aspects and advantages of the presentinvention will become more apparent from the following detaileddescription of the present invention when taken in conjunction with theaccompanying drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a longitudinal sectional view showing a configuration of aheat treatment apparatus according to the present invention;

FIG. 2 is a perspective view showing the entire external appearance of aholder;

FIG. 3 is a top plan view of the holder;

FIG. 4 is a side view of the holder as seen from one side;

FIG. 5 is a plan view of a transfer mechanism;

FIG. 6 is a side view of the transfer mechanism;

FIG. 7 is a plan view showing an arrangement of halogen lamps;

FIG. 8 is a view showing a configuration of an exhaust part;

FIG. 9 is a view showing a structure in which a metal film is depositedon a semiconductor wafer;

FIG. 10 is a graph showing changes in pressure in a chamber according toa first preferred embodiment of the present invention;

FIG. 11 is a graph showing changes in pressure in the chamber accordingto a second preferred embodiment of the present invention;

FIG. 12 is a graph showing changes in pressure in the chamber accordingto a third preferred embodiment of the present invention; and

FIG. 13 is a graph showing changes in pressure in the chamber accordingto a fourth preferred embodiment of the present invention.

DESCRIPTION OF THE PREFERRED EMBODIMENTS

Preferred embodiments according to the present invention will now bedescribed in detail with reference to the drawings.

First Preferred Embodiment

FIG. 1 is a longitudinal sectional view showing a configuration of aheat treatment apparatus 1 according to the present invention. The heattreatment apparatus 1 according to the present preferred embodiment is aflash lamp annealer for irradiating a disk-shaped semiconductor wafer Wserving as a substrate with a flash of light to heat the semiconductorwafer W. The size of the semiconductor wafer W to be treated is notparticularly limited. For example, the semiconductor wafer W to betreated has a diameter of 300 mm and 450 mm. The semiconductor wafer Wprior to the transport into the heat treatment apparatus 1 has a film ofmetal such as nickel deposited thereon, and the heat treatment apparatus1 performs a heating treatment on the semiconductor wafer W to therebyform and grow a silicide that is a compound of the metal and silicon. Itshould be noted that the dimensions of components and the number ofcomponents are shown in exaggeration or in simplified form, asappropriate, in FIG. 1 and the subsequent figures for the sake of easierunderstanding.

The heat treatment apparatus 1 includes a chamber 6 for receiving asemiconductor wafer W therein, a flash heating part 5 including aplurality of built-in flash lamps FL, and a halogen heating part 4including a plurality of built-in halogen lamps HL. The flash heatingpart 5 is provided over the chamber 6, and the halogen heating part 4 isprovided under the chamber 6. The heat treatment apparatus 1 furtherincludes a holder 7 provided inside the chamber 6 and for holding asemiconductor wafer W in a horizontal attitude, and a transfer mechanism10 provided inside the chamber 6 and for transferring a semiconductorwafer W between the holder 7 and the outside of the heat treatmentapparatus 1. The heat treatment apparatus 1 further includes acontroller 3 for controlling operating mechanisms provided in thehalogen heating part 4, the flash heating part 5, and the chamber 6 tocause the operating mechanisms to heat-treat a semiconductor wafer W.

The chamber 6 is configured such that upper and lower chamber windows 63and 64 made of quartz are mounted to the top and bottom, respectively,of a tubular chamber side portion 61. The chamber side portion 61 has agenerally tubular shape having an open top and an open bottom. The upperchamber window 63 is mounted to block the top opening of the chamberside portion 61, and the lower chamber window 64 is mounted to block thebottom opening thereof. The upper chamber window 63 forming the ceilingof the chamber 6 is a disk-shaped member made of quartz, and serves as aquartz window that transmits a flash of light emitted from the flashheating part 5 therethrough into the chamber 6. The lower chamber window64 forming the floor of the chamber 6 is also a disk-shaped member madeof quartz, and serves as a quartz window that transmits light emittedfrom the halogen heating part 4 therethrough into the chamber 6. Theupper chamber window 63 and the lower chamber window 64 have a thicknessof approximately 28 mm, for example.

An upper reflective ring 68 is mounted to an upper portion of the innerwall surface of the chamber side portion 61, and a lower reflective ring69 is mounted to a lower portion thereof. Both of the upper and lowerreflective rings 68 and 69 are in the form of an annular ring. The upperreflective ring 68 is mounted by being inserted downwardly from the topof the chamber side portion 61. The lower reflective ring 69, on theother hand, is mounted by being inserted upwardly from the bottom of thechamber side portion 61 and fastened with screws not shown. In otherwords, the upper and lower reflective rings 68 and 69 are removablymounted to the chamber side portion 61. An interior space of the chamber6, i.e. a space surrounded by the upper chamber window 63, the lowerchamber window 64, the chamber side portion 61, and the upper and lowerreflective rings 68 and 69, is defined as a heat treatment space 65.

A recessed portion 62 is defined in the inner wall surface of thechamber 6 by mounting the upper and lower reflective rings 68 and 69 tothe chamber side portion 61. Specifically, the recessed portion 62 isdefined which is surrounded by a middle portion of the inner wallsurface of the chamber side portion 61 where the reflective rings 68 and69 are not mounted, a lower end surface of the upper reflective ring 68,and an upper end surface of the lower reflective ring 69. The recessedportion 62 is provided in the form of a horizontal annular ring in theinner wall surface of the chamber 6, and surrounds the holder 7 whichholds a semiconductor wafer W.

The chamber side portion 61 and the upper and lower reflective rings 68and 69 are made of a metal material (e.g., stainless steel) with highstrength and high heat resistance. The inner peripheral surfaces of theupper and lower reflective rings 68 and 69 are provided as mirrorsurfaces by electrolytic nickel plating.

The chamber side portion 61 is provided with a transport opening(throat) 66 for the transport of a semiconductor wafer W therethroughinto and out of the chamber 6. The transport opening 66 is openable andclosable by a gate valve 185. The transport opening 66 is connected incommunication with an outer peripheral surface of the recessed portion62. Thus, when the transport opening 66 is opened by the gate valve 185,a semiconductor wafer W is allowed to be transported through thetransport opening 66 and the recessed portion 62 into and out of theheat treatment space 65. When the transport opening 66 is closed by thegate valve 185, the heat treatment space 65 in the chamber 6 is anenclosed space.

At least one gas supply opening 81 for supplying a treatment gas (inthis preferred embodiment, nitrogen (N₂) gas) therethrough into the heattreatment space 65 is provided in an upper portion of the inner wall ofthe chamber 6. The gas supply opening 81 is provided above the recessedportion 62, and may be provided in the upper reflective ring 68. The gassupply opening 81 is connected in communication with a gas supply pipe83 through a buffer space 82 provided in the form of an annular ringinside the side wall of the chamber 6. The gas supply pipe 83 isconnected to a gas supply source 85. The gas supply source 85 feedsnitrogen gas as the treatment gas to the gas supply pipe 83 under thecontrol of the controller 3. A valve 84 and a flow regulating valve 90are inserted at midpoints in the gas supply pipe 83. When the valve 84is opened, the treatment gas is fed from the gas supply source 85 to thebuffer space 82. The flow rate of the treatment gas flowing through thegas supply pipe 83 to the buffer space 82 is regulated by the flowregulating valve 90. The flow rate of the treatment gas determined bythe flow regulating valve 90 is variable by the control of thecontroller 3. The treatment gas flowing in the buffer space 82 flows ina spreading manner within the buffer space 82 which is lower in fluidresistance than the gas supply opening 81, and is supplied through thegas supply opening 81 into the heat treatment space 65. It should benoted that the treatment gas is not limited to nitrogen gas, but may beinert gases such as argon (Ar) and helium (He), and reactive gases suchas hydrogen (H₂), ammonia (NH₃), chlorine (Cl₂) and hydrogen chloride(HCl).

At least one gas exhaust opening 86 for exhausting a gas from the heattreatment space 65 is provided in a lower portion of the inner wall ofthe chamber 6. The gas exhaust opening 86 is provided below the recessedportion 62, and may be provided in the lower reflective ring 69. The gasexhaust opening 86 is connected in communication with a gas exhaust pipe88 through a buffer space 87 provided in the form of an annular ringinside the side wall of the chamber 6. The gas exhaust pipe 88 isconnected to an exhaust part 190. A valve 89 is inserted at somemidpoint in the gas exhaust pipe 88. When the valve 89 is opened, thegas in the heat treatment space 65 is exhausted through the gas exhaustopening 86 and the buffer space 87 to the gas exhaust pipe 88. The atleast one gas supply opening 81 and the at least one gas exhaust opening86 may include a plurality of gas supply openings 81 and a plurality ofgas exhaust openings 86, respectively, arranged in a circumferentialdirection of the chamber 6, and may be in the form of slits.

FIG. 8 is a view showing a configuration of the exhaust part 190. Theexhaust part 190 includes an exhaust pump 191, a flow regulating valve196, three bypass lines 197, 198 and 199, and three exhaust valves 192,193 and 194. The gas exhaust pipe 88 guiding the gas exhausted from thechamber 6 is connected through the three bypass lines 197, 198 and 199to the exhaust pump 191. The three bypass lines 197, 198 and 199 areprovided in parallel with each other. The three bypass lines 197, 198and 199 are different in pipe diameter from each other. The bypass line197 has the smallest diameter, and the bypass line 199 has the largestdiameter. The bypass line 198 has a diameter intermediate between thediameters of the bypass lines 197 and 199. Thus, the bypass lines 197,198 and 199 are listed in order of increasing flow rate of the gas thatcan pass therethrough.

The three exhaust valves 192, 193 and 194 are provided respectively inthe three bypass lines 197, 198 and 199. Specifically, the exhaust valve192 is inserted in the bypass line 197; the exhaust valve 193 isinserted in the bypass line 198; and the exhaust valve 194 is insertedin the bypass line 199. When the three exhaust valves 192, 193 and 194are opened while the exhaust pump 191 is in operation, the gas exhaustedfrom the chamber 6 and guided by the gas exhaust pipe 88 passes throughthe corresponding bypass lines 197, 198 and 199 and is then suctioned bythe exhaust pump 191.

The three bypass lines 197, 198 and 199 are different in exhaustcapability from each other because of their different pipe diameters.The exhaust capability increases as the pipe diameter increases. Thebypass lines 197, 198 and 199 are listed in order of increasing exhaustcapability. Thus, the exhaust flow rate from the chamber 6 is controlledby opening or closing each of the three exhaust valves 192, 193 and 194.Any one of the three exhaust valves 192, 193 and 194 may be opened.Alternatively, two or all of the three exhaust valves 192, 193 and 194may be opened. For example, when the exhaust valves 193 and 194 areclosed and only the exhaust valve 192 is opened, the gas is exhausted atthe lowest exhaust flow rate. When all of the three exhaust valves 192,193 and 194 are opened, the gas is exhausted at the highest exhaust flowrate.

The flow regulating valve 196 is inserted between the joint portion ofthe three bypass lines 197, 198 and 199 and the exhaust pump 191. Theexhaust flow rate in the gas exhaust pipe 88 is also regulatable by theflow regulating valve 196. The exhaust flow rate determined by the flowregulating valve 196 is variable by the control of the controller 3.While the three bypass lines 197, 198 and 199 constitute a mechanismthat regulates the exhaust flow rate in a discontinuous and multi-stepmanner, the flow regulating valve 196 is a mechanism that regulates theexhaust flow rate in a continuous and stepless manner.

The gas supply pipe 83, the gas exhaust pipe 88 and the three bypasslines 197, 198 and 199 are made of stainless steel with high strengthand high resistance to corrosion. A pressure gauge 180 for measuring thepressure in the heat treatment space 65 is provided in the chamber 6.Preferably, the pressure gauge 180 has a measurement range ofapproximately 5 Pa to 0.2 MPa.

FIG. 2 is a perspective view showing the entire external appearance ofthe holder 7. FIG. 3 is a top plan view of the holder 7. FIG. 4 is aside view of the holder 7 as seen from one side. The holder 7 includes abase ring 71, coupling portions 72, and a susceptor 74. The base ring71, the coupling portions 72, and the susceptor 74 are all made ofquartz. In other words, the whole of the holder 7 is made of quartz.

The base ring 71 is a quartz member in the form of an annular ring. Thebase ring 71 is supported by the wall surface of the chamber 6 by beingplaced on the bottom surface of the recessed portion 62 (with referenceto FIG. 1). The multiple coupling portions 72 (in the present preferredembodiment, four coupling portions 72) are mounted upright on the uppersurface of the base ring 71 in the form of the annular ring and arrangedin a circumferential direction of the base ring 71. The couplingportions 72 are quartz members, and are rigidly secured to the base ring71 by welding. The base ring 71 may be of an arcuate shape such that aportion is removed from the annular ring.

The susceptor 74 having a planar shape is supported by the four couplingportions 72 provided on the base ring 71. The susceptor 74 is agenerally circular planar member made of quartz. The diameter of thesusceptor 74 is greater than that of a semiconductor wafer W. In otherwords, the susceptor 74 has a size, as seen in plan view, greater thanthat of the semiconductor wafer W. Multiple (in the present preferredembodiment, five) guide pins 76 are mounted upright on the upper surfaceof the susceptor 74. The five guide pins 76 are disposed along thecircumference of a circle concentric with the outer circumference of thesusceptor 74. The diameter of a circle on which the five guide pins 76are disposed is slightly greater than the diameter of the semiconductorwafer W. The guide pins 76 are also made of quartz. The guide pins 76may be machined from a quartz ingot integrally with the susceptor 74.Alternatively, the guide pins 76 separately machined may be attached tothe susceptor 74 by welding and the like.

The four coupling portions 72 provided upright on the base ring 71 andthe lower surface of a peripheral portion of the susceptor 74 arerigidly secured to each other by welding. In other words, the susceptor74 and the base ring 71 are fixedly coupled to each other with thecoupling portions 72, and the holder 7 is an integrally formed membermade of quartz. The base ring 71 of such a holder 7 is supported by thewall surface of the chamber 6, whereby the holder 7 is mounted to thechamber 6. With the holder 7 mounted to the chamber 6, the susceptor 74of a generally disc-shaped configuration assumes a horizontal attitude(an attitude such that the normal to the susceptor 74 coincides with avertical direction). A semiconductor wafer W transported into thechamber 6 is placed and held in a horizontal attitude on the susceptor74 of the holder 7 mounted to the chamber 6. The semiconductor wafer Wis placed inside the circle defined by the five guide pins 76. Thisprevents the horizontal misregistration of the semiconductor wafer W.The number of guide pins 76 is not limited to five, but may bedetermined so as to prevent the misregistration of the semiconductorwafer W.

As shown in FIGS. 2 and 3, an opening 78 and a notch 77 are provided inthe susceptor 74 so as to extend vertically through the susceptor 74.The notch 77 is provided to allow a distal end portion of a probe of acontact-type thermometer 130 including a thermocouple to passtherethrough. The opening 78, on the other hand, is provided for aradiation thermometer 120 to receive radiation (infrared radiation)emitted from the lower surface of the semiconductor wafer W held by thesusceptor 74. The susceptor 74 further includes four through holes 79bored therein and designed so that lift pins 12 of the transfermechanism 10 to be described later pass through the through holes 79,respectively, to transfer a semiconductor wafer W.

FIG. 5 is a plan view of the transfer mechanism 10. FIG. 6 is a sideview of the transfer mechanism 10. The transfer mechanism 10 includes apair of transfer arms 11. The transfer arms 11 are of an arcuateconfiguration extending substantially along the annular recessed portion62. Each of the transfer arms 11 includes the two lift pins 12 mountedupright thereon. The transfer arms 11 are pivotable by a horizontalmovement mechanism 13. The horizontal movement mechanism 13 moves thepair of transfer arms 11 horizontally between a transfer operationposition (a position indicated by solid lines in FIG. 5) in which asemiconductor wafer W is transferred to and from the holder 7 and aretracted position (a position indicated by dash-double-dot lines inFIG. 5) in which the transfer arms 11 do not overlap the semiconductorwafer W held by the holder 7 as seen in plan view. The horizontalmovement mechanism 13 may be of the type which causes individual motorsto pivot the transfer arms 11 respectively or of the type which uses alinkage mechanism to cause a single motor to pivot the pair of transferarms 11 in cooperative relation.

The transfer arms 11 are moved upwardly and downwardly together with thehorizontal movement mechanism 13 by an elevating mechanism 14. As theelevating mechanism 14 moves up the pair of transfer arms 11 in theirtransfer operation position, the four lift pins 12 in total pass throughthe respective four through holes 79 (with reference to FIGS. 2 and 3)bored in the susceptor 74 so that the upper ends of the lift pins 12protrude from the upper surface of the susceptor 74. On the other hand,as the elevating mechanism 14 moves down the pair of transfer arms 11 intheir transfer operation position to take the lift pins 12 out of therespective through holes 79 and the horizontal movement mechanism 13moves the pair of transfer arms 11 so as to open the transfer arms 11,the transfer arms 11 move to their retracted position. The retractedposition of the pair of transfer arms 11 is immediately over the basering 71 of the holder 7. The retracted position of the transfer arms 11is inside the recessed portion 62 because the base ring 71 is placed onthe bottom surface of the recessed portion 62.

Referring again to FIG. 1, the flash heating part 5 provided over thechamber 6 includes an enclosure 51, a light source provided inside theenclosure 51 and including the multiple (in the present preferredembodiment, 30) xenon flash lamps FL, and a reflector 52 provided insidethe enclosure 51 so as to cover the light source from above. The flashheating part 5 further includes a lamp light radiation window 53 mountedto the bottom of the enclosure 51. The lamp light radiation window 53forming the floor of the flash heating part 5 is a plate-like quartzwindow made of quartz. The flash heating part 5 is provided over thechamber 6, whereby the lamp light radiation window 53 is opposed to theupper chamber window 63. The flash lamps FL direct a flash of light fromover the chamber 6 through the lamp light radiation window 53 and theupper chamber window 63 toward the heat treatment space 65.

The flash lamps FL, each of which is a rod-shaped lamp having anelongated cylindrical shape, are arranged in a plane so that thelongitudinal directions of the respective flash lamps FL are in parallelwith each other along the main surface of a semiconductor wafer W heldby the holder 7 (that is, in a horizontal direction). Thus, a planedefined by the arrangement of the flash lamps FL is also a horizontalplane.

Each of the xenon flash lamps FL includes a rod-shaped glass tube(discharge tube) containing xenon gas sealed therein and having positiveand negative electrodes provided on opposite ends thereof and connectedto a capacitor, and a trigger electrode attached to the outer peripheralsurface of the glass tube. Because the xenon gas is electricallyinsulative, no current flows in the glass tube in a normal state even ifelectrical charge is stored in the capacitor. However, if a high voltageis applied to the trigger electrode to produce an electrical breakdown,electricity stored in the capacitor flows momentarily in the glass tube,and xenon atoms or molecules are excited at this time to cause lightemission. Such a xenon flash lamp FL has the property of being capableof emitting extremely intense light as compared with a light source thatstays lit continuously such as a halogen lamp HL because theelectrostatic energy previously stored in the capacitor is convertedinto an ultrashort light pulse ranging from 0.1 to 100 milliseconds.Thus, the flash lamps FL are pulsed light emitting lamps which emitlight instantaneously for an extremely short time period of less thanone second. The light emission time of the flash lamps FL is adjustableby the coil constant of a lamp light source which supplies power to theflash lamps FL.

The reflector 52 is provided over the plurality of flash lamps FL so asto cover all of the flash lamps FL. A fundamental function of thereflector 52 is to reflect flashes of light emitted from the pluralityof flash lamps FL toward the heat treatment space 65. The reflector 52is a plate made of an aluminum alloy. A surface of the reflector 52 (asurface which faces the flash lamps FL) is roughened by abrasiveblasting.

The halogen heating part 4 provided under the chamber 6 includes anenclosure 41 incorporating the multiple (in the present preferredembodiment, 40) halogen lamps HL. The halogen heating part 4 is a lightirradiator that directs light from under the chamber 6 through the lowerchamber window 64 toward the heat treatment space 65 to heat thesemiconductor wafer W by means of the halogen lamps HL.

FIG. 7 is a plan view showing an arrangement of the multiple halogenlamps HL. The 40 halogen lamps HL are arranged in two tiers, i.e. upperand lower tiers. That is, 20 halogen lamps HL are arranged in the uppertier closer to the holder 7, and 20 halogen lamps HL are arranged in thelower tier farther from the holder 7 than the upper tier. Each of thehalogen lamps HL is a rod-shaped lamp having an elongated cylindricalshape. The 20 halogen lamps HL in the upper tier and the 20 halogenlamps HL in the lower tier are arranged so that the longitudinaldirections thereof are in parallel with each other along a main surfaceof a semiconductor wafer W held by the holder 7 (that is, in ahorizontal direction). Thus, a plane defined by the arrangement of thehalogen lamps HL in each of the upper and lower tiers is also ahorizontal plane.

As shown in FIG. 7, the halogen lamps HL in each of the upper and lowertiers are disposed at a higher density in a region opposed to theperipheral portion of the semiconductor wafer W held by the holder 7than in a region opposed to the central portion thereof. In other words,the halogen lamps HL in each of the upper and lower tiers are arrangedat shorter intervals in the peripheral portion of the lamp arrangementthan in the central portion thereof. This allows a greater amount oflight to impinge upon the peripheral portion of the semiconductor waferW where a temperature decrease is prone to occur when the semiconductorwafer W is heated by the irradiation thereof with light from the halogenheating part 4.

The group of halogen lamps HL in the upper tier and the group of halogenlamps HL in the lower tier are arranged to intersect each other in alattice pattern. In other words, the 40 halogen lamps HL in total aredisposed so that the longitudinal direction of the 20 halogen lamps HLarranged in the upper tier and the longitudinal direction of the 20halogen lamps HL arranged in the lower tier are orthogonal to eachother.

Each of the halogen lamps HL is a filament-type light source whichpasses current through a filament disposed in a glass tube to make thefilament incandescent, thereby emitting light. A gas prepared byintroducing a halogen element (iodine, bromine and the like) in traceamounts into an inert gas such as nitrogen, argon and the like is sealedin the glass tube. The introduction of the halogen element allows thetemperature of the filament to be set at a high temperature whilesuppressing a break in the filament. Thus, the halogen lamps HL have theproperties of having a longer life than typical incandescent lamps andbeing capable of continuously emitting intense light. Thus, the halogenlamps HL are continuously lighted lamps which emit light continuously atleast for a time period of not less than one second. In addition, thehalogen lamps HL, which are rod-shaped lamps, have a long life. Thearrangement of the halogen lamps HL in a horizontal direction providesgood efficiency of radiation toward the semiconductor wafer W providedover the halogen lamps HL.

A reflector 43 is provided also inside the enclosure 41 of the halogenheating part 4 under the halogen lamps HL arranged in two tiers (FIG.1). The reflector 43 reflects the light emitted from the halogen lampsHL toward the heat treatment space 65.

The controller 3 controls the aforementioned various operatingmechanisms provided in the heat treatment apparatus 1. The controller 3is similar in hardware configuration to a typical computer.Specifically, the controller 3 includes a CPU that is a circuit forperforming various computation processes, a ROM or read-only memory forstoring a basic program therein, a RAM or readable/writable memory forstoring various pieces of information therein, and a magnetic disk forstoring control software, data and the like therein. The CPU in thecontroller 3 executes a predetermined processing program, whereby theprocesses in the heat treatment apparatus 1 proceed. Also, thecontroller 3 controls the valve 84, the valve 89, the flow regulatingvalve 90, the flow regulating valve 196, the exhaust pump 191 and thethree exhaust valves 192, 193 and 194 to adjust the pressure in the heattreatment space 65 in the chamber 6, a gas supply flow rate to thechamber 6, and an exhaust flow rate from the chamber 6.

The heat treatment apparatus 1 further includes, in addition to theaforementioned components, various cooling structures to prevent anexcessive temperature rise in the halogen heating part 4, the flashheating part 5 and the chamber 6 because of the heat energy generatedfrom the halogen lamps HL and the flash lamps FL during the heattreatment of a semiconductor wafer W. As an example, a water coolingtube (not shown) is provided in the walls of the chamber 6. Also, thehalogen heating part 4 and the flash heating part 5 have an air coolingstructure for forming a gas flow therein to exhaust heat. Air issupplied to a gap between the upper chamber window 63 and the lamp lightradiation window 53 to cool down the flash heating part 5 and the upperchamber window 63.

Next, a procedure for the treatment of a semiconductor wafer W in theheat treatment apparatus 1 will be described. A semiconductor wafer W tobe treated herein is a semiconductor substrate including a metal filmdeposited on a base material of silicon. The heat treatment apparatus 1irradiates the semiconductor wafer W with a flash of light to heat thesemiconductor wafer W, thereby forming a silicide.

FIG. 9 is a view showing a structure in which a metal film is depositedon the semiconductor wafer W. A silicon oxide film (SiO₂) 102 is formedon a base material 101 of silicon of the semiconductor wafer W. Thesilicon oxide film 102 is a layer required as an interface layer filmbetween the base material 101 of silicon and a high dielectric constantfilm 103. The thickness of the silicon oxide film 102 is extremely smalland is approximately 1 nm, for example. Various known methods such as athermal oxidation method may be used as a technique for forming thesilicon oxide film 102.

The high dielectric constant film 103 serving as a gate insulator filmis formed on the silicon oxide film 102. Examples of the material of thehigh dielectric constant film 103 used herein include high dielectricconstant materials such as HfO₂, ZrO₂, Al₂O₃ and La₂O₃ (in the presentpreferred embodiment, HfO₂), for example. The high dielectric constantfilm 103 is formed by depositing such a high dielectric constantmaterial on the silicon oxide film 102 through the use of ALD (atomiclayer deposition), for example. Although the high dielectric constantfilm 103 deposited on the silicon oxide film 102 has a thickness ofseveral nanometers, the EOT (equivalent oxide thickness) of the highdielectric constant film 103 is on the order of 1 nm. The method offorming the high dielectric constant film 103 is not limited to the ALD,but known techniques such as MOCVD (metal organic chemical vapordeposition), for example, may be used to form the high dielectricconstant film 103.

A gate electrode 105 is formed on the high dielectric constant film 103.The gate electrode 105 according to the present preferred embodiment isa metal gate electrode made of titanium (Ti) or titanium nitride (TiN).The gate electrode 105 need not be the metal gate electrode, but may bemade of polysilicon. Side walls 104 made of SiN are formed on oppositesides of the gate electrode 105. The side walls 104 are formed beforethe high dielectric constant film 103 in a gate-last process.

Portions of the upper surface of the base material 101 of silicon whichlie on opposite sides of the gate electrode 105 serve as source/drainregions (regions defined by dotted lines in FIG. 9). Ions are implantedin the source/drain regions by an ion implantor.

A metal film 108 is deposited on the source/drain regions. Examples of ametal material for use in silicide technology include nickel (Ni),cobalt (Co), titanium (Ti), tungsten (W) and the like (in the presentpreferred embodiment, nickel). The metal film 108 is deposited by knowndeposition techniques such as sputtering and vacuum evaporation.

The heat treatment apparatus 1 heat-treats the semiconductor wafer W inwhich the metal film 108 is deposited on the source/drain regions of thebase material 101 of silicon as shown in FIG. 9. A procedure for theoperation in the heat treatment apparatus 1 will be describedhereinafter. The procedure for the operation in the heat treatmentapparatus 1 proceeds under the control of the controller 3 over theoperating mechanisms of the heat treatment apparatus 1.

First, the semiconductor wafer W with the metal film 108 depositedthereon is transported into the chamber 6 of the heat treatmentapparatus 1. For the transport of the semiconductor wafer W into thechamber 6, the gate valve 185 is opened to open the transport opening66. A transport robot outside the heat treatment apparatus 1 transportsthe semiconductor wafer W with the metal film 108 deposited thereonthrough the transport opening 66 into the heat treatment space 65 of thechamber 6. At this time, air is carried into the heat treatment space 65of the chamber 6 as the semiconductor wafer W is transported into theheat treatment space 65 because the pressure inside and outside thechamber 6 is equal to atmospheric pressure. To prevent this, nitrogengas may be continuously supplied from the gas supply source 85 into thechamber 6 by opening the valve 84 to cause the nitrogen gas to flowoutwardly through the opened transport opening 66, thereby minimizingthe atmosphere outside the apparatus flowing into the chamber 6. It isalso preferable that the supply flow rate of the nitrogen gas isincreased when the gate valve 185 is open, as compared with the supplyflow rate during the heat treatment of the semiconductor wafer W (forexample, the supply flow rate is 120 liters per minute when the gatevalve 185 is open whereas the supply flow rate is normally 30 liters perminute during the heat treatment). It is further preferable that thevalve 89 is closed to stop exhausting the gas from the chamber 6 at thesame time that the supply flow rate of the nitrogen gas is increased.This causes the nitrogen gas supplied into the chamber 6 to flowoutwardly only through the transport opening 66, thereby effectivelypreventing outside air from flowing into the chamber 6.

The semiconductor wafer W transported into the heat treatment space 65by the transport robot is moved forward to a position lying immediatelyover the holder 7 and is stopped thereat. Then, the pair of transferarms 11 of the transfer mechanism 10 is moved horizontally from theretracted position to the transfer operation position and is then movedupwardly, whereby the lift pins 12 pass through the through holes 79 andprotrude from the upper surface of the susceptor 74 to receive thesemiconductor wafer W.

After the semiconductor wafer W is placed on the lift pins 12, thetransport robot moves out of the heat treatment space 65, and the gatevalve 185 closes the transport opening 66. Then, the pair of transferarms 11 moves downwardly to transfer the semiconductor wafer W from thetransfer mechanism 10 to the susceptor 74 of the holder 7, so that thesemiconductor wafer W is held in a horizontal attitude. Thesemiconductor wafer W is held on the susceptor 74 in such an attitudethat a front surface thereof where the metal film 108 is deposited isthe upper surface. Also, the semiconductor wafer W is held inside thefive guide pins 76 on the upper surface of the susceptor 74. The pair oftransfer arms 11 moved downwardly below the susceptor 74 is moved backto the retracted position, i.e. to the inside of the recessed portion62, by the horizontal movement mechanism 13.

After the semiconductor wafer W is received in the chamber 6 and thetransport opening 66 is closed by the gate valve 185, the pressure inthe chamber 6 is reduced to a pressure lower than atmospheric pressure.Specifically, the transport opening 66 is closed, so that the heattreatment space 65 of the chamber 6 becomes an enclosed space. In thisstate, the valve 89 for exhausting the gas is opened while the valve 84for supplying the gas is closed. The controller 3 opens the exhaustvalve 192 provided in the bypass line 197 having the smallest pipediameter of the three bypass lines 197, 198 and 199 while operating theexhaust pump 191. The remaining exhaust valves 193 and 194 are closed.Thus, the gas is exhausted from the chamber 6 while the gas is notsupplied into the chamber 6, so that the pressure in the heat treatmentspace 65 of the chamber 6 is reduced.

FIG. 10 is a graph showing changes in pressure in the chamber 6according to the first preferred embodiment. In FIG. 10, the abscissarepresents time, and the ordinate represents pressure in the chamber 6.At the point in time when the semiconductor wafer W is received in thechamber 6 and the transport opening 66 is closed, the pressure in thechamber 6 is equal to ordinary pressure Ps (=atmosphericpressure=approximately 101325 Pa). At time t1, the reduction in pressurein the chamber 6 starts. In an early stage of the pressure reduction,only the bypass line 197 having the smallest pipe diameter of the threebypass lines 197, 198 and 199 is used, so that the exhaust flow rate islow and an exhaust speed is relatively low.

Next, at time t2, the controller 3 opens all of the three exhaust valves192, 193 and 194. This increases the exhaust flow rate from the chamber6, so that the exhaust speed becomes faster. Then, at time t3, thepressure (degree of vacuum) in the chamber 6 reaches a pressure P1. Thepressure P1 is, for example, approximately 100 Pa. That is, after thegas is exhausted at a low exhaust flow rate in the early stage of thepressure reduction, the exhaust flow rate is changed to a higher exhaustflow rate, and the gas is exhausted at the higher exhaust flow rate. Theflow rate in the flow regulating valve 196 is constant in the firstpreferred embodiment.

If the gas is exhausted rapidly at a high exhaust flow rate at the startof the pressure reduction, there is a danger that a large gas flowchange occurs in the chamber 6 to cause particles deposited onstructures (e.g., the lower chamber window 64) of the chamber 6 to swirlup and be deposited again on the semiconductor wafer W, resulting incontamination of the semiconductor wafer W. When the exhaust flow rateis changed to a higher exhaust flow rate and the gas is exhausted at thehigher exhausted flow rate after the gas is exhausted calmly at a lowexhaust flow rate in the early stage of the pressure reduction, suchparticles in the chamber 6 are prevented from swirling up.

At the time t3 when the pressure in the chamber 6 reaches the pressureP1, the valve 89 for exhausting the gas is closed and the valve 84 forsupplying the gas is opened, so that the nitrogen gas is supplied fromthe gas supply source 85 into the heat treatment space 65 of the chamber6. As a result, a nitrogen atmosphere is formed around the semiconductorwafer W held by the holder 7 in the chamber 6. While the nitrogen gas issupplied into the chamber 6, only the bypass line 197 having thesmallest pipe diameter may be used to exhaust the gas from the chamber6. In this case, the supply flow rate of the treatment gas is of coursehigher than the exhaust flow rate thereof.

By supplying the nitrogen gas into the chamber 6, the pressure in thechamber 6 is increased from the pressure P1 to return to the ordinarypressure Ps at time t4. In the first preferred embodiment, the pressurein the chamber 6 is reduced once to the pressure P1 and then returned tothe ordinary pressure Ps. This achieves an oxygen concentration of notgreater than approximately 200 ppb in the nitrogen atmosphere in thechamber 6 after the pressure return to the ordinary pressure Ps.

After the time t4 when the pressure in the chamber 6 is returned to theordinary pressure Ps, the supply flow rate of the nitrogen gas to thechamber 6 and the exhaust flow rate thereof from the chamber 6 are madeequal to each other, so that the pressure in the chamber 6 is maintainedat the ordinary pressure Ps.

At the time t4 when the pressure in the chamber 6 is returned to theordinary pressure Ps, the 40 halogen lamps HL in the halogen heatingpart 4 turn on simultaneously to start preheating (or assist-heating).Halogen light emitted from the halogen lamps HL is transmitted throughthe lower chamber window 64 and the susceptor 74 both made of quartz,and impinges upon the back surface of the semiconductor wafer W. Theback surface of the semiconductor wafer W refers to a main surfacethereof on the opposite side from the front surface with the metal film108 deposited thereon. The semiconductor wafer W is irradiated with thehalogen light from the halogen lamps HL, so that the temperature of thesemiconductor wafer W increases. It should be noted that the transferarms 11 of the transfer mechanism 10, which are retracted to the insideof the recessed portion 62, do not become an obstacle to the heatingusing the halogen lamps HL.

The temperature of the semiconductor wafer W is measured with thecontact-type thermometer 130 when the halogen lamps HL perform thepreheating. Specifically, the contact-type thermometer 130 incorporatinga thermocouple comes through the notch 77 into contact with the lowersurface of the semiconductor wafer W held by the susceptor 74 to measurethe temperature of the semiconductor wafer W which is on the increase.The measured temperature of the semiconductor wafer W is transmitted tothe controller 3. The controller 3 controls the output from the halogenlamps HL while monitoring whether the temperature of the semiconductorwafer W which is on the increase by the irradiation with light from thehalogen lamps HL reaches a predetermined preheating temperature T1 ornot. In other words, the controller 3 effects feedback control of theoutput from the halogen lamps HL, based on the value measured with thecontact-type thermometer 130, so that the temperature of thesemiconductor wafer W is equal to the preheating temperature T1. Thepreheating temperature T1 is in the range of room temperature to 300°C., and shall be 200° C. in the present preferred embodiment. It shouldbe noted that, when the temperature of the semiconductor wafer W isincreased by the irradiation with light from the halogen lamps HL, thetemperature is not measured with the radiation thermometer 120. This isbecause the halogen light emitted from the halogen lamps HL enters theradiation thermometer 120 in the form of disturbance light to obstructthe precise measurement of the temperature.

After the temperature of the semiconductor wafer W reaches thepreheating temperature T1, the controller 3 maintains the temperature ofthe semiconductor wafer W at the preheating temperature T1 for a shorttime. Specifically, at the point in time when the temperature of thesemiconductor wafer W measured with the contact-type thermometer 130reaches the preheating temperature T1, the controller 3 adjusts theoutput from the halogen lamps HL to maintain the temperature of thesemiconductor wafer W at approximately the preheating temperature T1.

By performing such preheating using the halogen lamps HL, thetemperature of the entire semiconductor wafer W including the metal film108 is uniformly increased to the preheating temperature T1. In thestage of preheating using the halogen lamps HL, the semiconductor waferW shows a tendency to be lower in temperature in a peripheral portionthereof where heat dissipation is liable to occur than in a centralportion thereof. However, the halogen lamps HL in the halogen heatingpart 4 are disposed at a higher density in the region opposed to theperipheral portion of the semiconductor wafer W than in the regionopposed to the central portion thereof. This causes a greater amount oflight to impinge upon the peripheral portion of the semiconductor waferW where heat dissipation is liable to occur, thereby providing a uniformin-plane temperature distribution of the semiconductor wafer W in thestage of preheating. Further, the inner peripheral surface of the lowerreflective ring 69 mounted to the chamber side portion 61 is provided asa mirror surface. Thus, a greater amount of light is reflected from theinner peripheral surface of the lower reflective ring 69 toward theperipheral portion of the semiconductor wafer W. This provides a moreuniform in-plane temperature distribution of the semiconductor wafer Win the stage of preheating. It should be noted that the pressure in thechamber 6 during the preheating is maintained at the ordinary pressurePs.

Next, the flash lamps FL emit a flash of light to perform a flashheating treatment at time t5 when a predetermined time period haselapsed since the temperature of the semiconductor wafer W reached thepreheating temperature T1. At this time, part of the flash of lightemitted from the flash lamps FL travels directly toward the interior ofthe chamber 6. The remainder of the flash of light is reflected oncefrom the reflector 52, and then travels toward the interior of thechamber 6. The irradiation of the semiconductor wafer W with suchflashes of light achieves the flash heating of the semiconductor waferW.

The flash heating, which is achieved by the emission of a flash of lightfrom the flash lamps FL, is capable of increasing the temperature of thefront surface of the semiconductor wafer W in a short time.Specifically, the flash of light emitted from the flash lamps FL is anintense flash of light emitted for an extremely short period of timeranging from about 0.1 to about 100 milliseconds as a result of theconversion of the electrostatic energy previously stored in thecapacitor into such an ultrashort light pulse. By irradiating the frontsurface of the semiconductor wafer W with the metal film 108 depositedthereon with the flash of light from the flash lamps FL, silicon in thesource/drain regions and the metal film 108 react with each other toform a silicide (in the present preferred embodiment, nickel silicide).

A treatment temperature T2 that is the maximum temperature (peaktemperature) reached by the front surface of the semiconductor wafer Wsubjected to the flash irradiation is in the range of 600° C. to 1000°C. where the silicide grows, and shall be 900° C. in the presentpreferred embodiment. The light emission time of the flash lamps FL isas short as not greater than one second. The time period for theirradiation of light from the flash lamps FL is a short time periodranging from about 0.1 to about 100 milliseconds. Accordingly, the timerequired for the temperature of the front surface of the semiconductorwafer W to increase from the preheating temperature T1 to the treatmenttemperature T2 is also an extremely short time period of less than onesecond. Immediately after the flash irradiation, the temperature of thefront surface of the semiconductor wafer W rapidly decreases from thetreatment temperature T2.

After a predetermined time period has elapsed since the completion ofthe flash heating treatment, the halogen lamps HL turn off. This causesthe temperature of the semiconductor wafer W to decrease from thepreheating temperature T1. The contact-type thermometer 130 or theradiation thermometer 120 measures the temperature of the semiconductorwafer W which is on the decrease. The result of measurement istransmitted to the controller 3. The controller 3 monitors whether thetemperature of the semiconductor wafer W is decreased to a predeterminedtemperature or not, based on the result of measurement. After thetemperature of the semiconductor wafer W is decreased to thepredetermined temperature or below, the pair of transfer arms 11 of thetransfer mechanism 10 is moved horizontally again from the retractedposition to the transfer operation position and is then moved upwardly,so that the lift pins 12 protrude from the upper surface of thesusceptor 74 to receive the heat-treated semiconductor wafer W from thesusceptor 74. Subsequently, the transport opening 66 which has beenclosed is opened by the gate valve 185, and the transport robot outsidethe heat treatment apparatus 1 transports the semiconductor wafer Wplaced on the lift pins 12 to the outside. Thus, the heat treatmentapparatus 1 completes the heating treatment of the semiconductor waferW.

In the first preferred embodiment, the pressure in the chamber 6 isreduced once to the pressure P1 lower than atmospheric pressure and thenreturned to the ordinary pressure Ps by supplying the nitrogen gas. Thisachieves an oxygen concentration of not greater than approximately 200ppb in the chamber 6 after the pressure return to the ordinary pressurePs. If the atmosphere in the chamber 6 is replaced with the nitrogen gaswhile the pressure in the chamber 6 is not reduced but is maintained atthe ordinary pressure, the limit to which the oxygen concentration inthe chamber 6 can be decreased is approximately 2 ppm. That is, theprocess of reducing the pressure in the chamber 6 once to the pressureP1 and thereafter returning the pressure in the chamber 6 to theordinary pressure Ps as in the present preferred embodiment achieves thedecrease in the oxygen concentration in the chamber 6 to approximatelyone tenth, as compared with the process in which the pressure reductionis not performed.

When no special process is performed after the metal film 108 isdeposited on the source/drain regions of the base material 101 ofsilicon, a large number of defects are present near the interfacebetween the metal film 108 and the base material 101 of silicon. If theheat treatment for the silicide formation is performed with the oxygenconcentration maintained high around the semiconductor wafer W, oxygenin the atmosphere enters the defects near the interface between themetal film 108 and the base material 101. As a result, the interface andits surroundings are degraded to have a high resistance. Also, there arecases in which the silicide of nickel itself is oxidized. Oxygenremaining in the chamber 6 is a particular problem as a cause of suchoxidation. When the semiconductor wafer W is transported into thechamber 6 at an ordinary pressure as in the present preferredembodiment, a large amount of outside air is carried into the chamber 6to increase the residual oxygen concentration in the chamber 6. It ishence preferable to heat the semiconductor wafer W with the metal film108 deposited thereon to minimize the oxygen concentration in theatmosphere during the formation of the silicide.

In the first preferred embodiment, the pressure in the chamber 6 isreduced once to the pressure P1 lower than atmospheric pressure and thenreturned to the ordinary pressure Ps, so that the oxygen concentrationin the heat treatment space 65 of the chamber 6 during the formation ofthe silicide is decreased to approximately 200 ppb or less. Thissuppresses the increase in resistance of the silicide resulting from theentry of oxygen in the heat treatment space 65 into the defects near theinterface between the metal film 108 and the base material 101 duringthe process of silicide formation. Also, the oxidation of the silicideitself is prevented.

The silicide is required to be as thin as possible. In the firstpreferred embodiment, the excessive increase in the thickness of thesilicide is suppressed because the temperature of the front surface ofthe semiconductor wafer W is increased to the treatment temperature T2in an extremely short time by irradiating the front surface of thesemiconductor wafer W with a flash of light from the flash lamps FL fora time period of less than one second.

Increasing the supply flow rate of the nitrogen gas during the transportof the semiconductor wafer W into the chamber 6 to cause the nitrogengas to flow outwardly through the transport opening 66 prevents outsideair from flowing inwardly during the transport of the semiconductorwafer W into the chamber 6 to decrease the initial value of the oxygenconcentration in the chamber 6 prior to the treatment. This achieves asufficiently low residual oxygen concentration if the pressure P1 whichis the pressure reached during the pressure reduction in the chamber 6is high.

Further, after the gas is exhausted at a low flow rate at the start ofthe pressure reduction in the chamber 6, the exhaust flow rate ischanged to a higher exhaust flow rate and the gas is exhausted at thehigher exhaust flow rate, as mentioned above. This prevents particles inthe chamber 6 from swirling up.

Second Preferred Embodiment

Next, a second preferred embodiment according to the present inventionwill be described. The heat treatment apparatus 1 of the secondpreferred embodiment is exactly identical in configuration with that ofthe first preferred embodiment. The procedure for treatment of thesemiconductor wafer W in the heat treatment apparatus 1 of the secondpreferred embodiment is substantially similar to that of the firstpreferred embodiment. The second preferred embodiment differs from thefirst preferred embodiment in the pressure to which the reduced pressurein the chamber 6 is returned.

FIG. 11 is a graph showing changes in pressure in the chamber 6according to the second preferred embodiment. In FIG. 11, the abscissarepresents time, and the ordinate represents pressure in the chamber 6,as in FIG. 10. A pressure change pattern (pattern of FIG. 10) obtainedwhen the pressure in the chamber 6 is returned to the ordinary pressurePs in the first preferred embodiment is indicated by dotted lines inFIG. 11.

At the point in time when the semiconductor wafer W with the metal film108 deposited thereon is received in the chamber 6 and the transportopening 66 is closed, the pressure in the chamber 6 is equal to theordinary pressure Ps (=atmospheric pressure=approximately 101325 Pa), asin the first preferred embodiment. Then, the reduction in pressure inthe chamber 6 starts at the time t1. After the gas is exhausted at a lowexhaust flow rate in the early stage of the pressure reduction, theexhaust flow rate is changed to a higher exhaust flow rate at the timet2, and the gas is exhausted at the higher exhaust flow rate, as in thefirst preferred embodiment. This prevents particles in the chamber 6from swirling up.

At the time t3 when the pressure in the chamber 6 reaches the pressureP1, the valve 89 for exhausting the gas is closed and the valve 84 forsupplying the gas is opened, so that the nitrogen gas is supplied fromthe gas supply source 85 into the heat treatment space 65 of the chamber6. The operation thus far described is similar to that of the firstpreferred embodiment. The pressure P1 is, for example, approximately 100Pa.

In the second preferred embodiment, the pressure in the chamber 6 is notreturned to the ordinary pressure Ps but is returned to a pressure P2 attime t6 by supplying the nitrogen gas. The pressure P2 is higher thanthe pressure P1 and lower than the ordinary pressure Ps. The pressure P2is, for example, approximately 5000 Pa. In the second preferredembodiment, the pressure in the chamber 6 is reduced once to thepressure P1 and then returned to the pressure P2 higher than thepressure P1. This achieves an oxygen concentration of not greater thanapproximately 200 ppb in the chamber 6 after the pressure return to thepressure P2.

After the time t6 when the pressure in the chamber 6 is returned to thepressure P2, the supply flow rate of the nitrogen gas to the chamber 6and the exhaust flow rate thereof from the chamber 6 are made equal toeach other, so that the pressure in the chamber 6 is maintained at thepressure P2. While the pressure in the chamber 6 is maintained at thepressure P2, the preheating of the semiconductor wafer W is performed bythe halogen lamps HL, and the flash heating is thereafter performed attime t7 by irradiating the front surface of the semiconductor wafer Wwith a flash of light from the flash lamps FL. The details of thepreheating and the flash heating treatment in the second preferredembodiment are identical with those in the first preferred embodiment.By irradiating the front surface of the semiconductor wafer W with themetal film 108 deposited thereon with the flash of light from the flashlamps FL, silicon in the source/drain regions and the metal film 108react with each other to form a silicide.

After a predetermined time period has elapsed since the completion ofthe flash heating treatment, the valve 89 for exhausting the gas isclosed and the valve 84 for supplying the gas is opened, so that thenitrogen gas is supplied from the gas supply source 85 into the chamber6 to return the pressure in the chamber 6 to the ordinary pressure Ps.The halogen lamps HL turn off. This causes the temperature of thesemiconductor wafer W to decrease from the preheating temperature T1.The procedure for the subsequent transport of the semiconductor wafer Wthe temperature of which is decreased to a predetermined temperature outof the chamber 6 of the heat treatment apparatus 1 in the secondpreferred embodiment is similar to that in the first preferredembodiment.

Factors responsible for the particles swirling up in the chamber 6include the flash irradiation in addition to the gas supplied to andexhausted from the chamber 6. At the time of the flash irradiation fromthe flash lamps FL, the temperature of the front surface of thesemiconductor wafer W is momentarily increased, whereas the temperatureof the back surface of the semiconductor wafer W is not so muchincreased from the preheating temperature T1. Thus, a large temperaturedifference arises between the front and back surfaces of thesemiconductor wafer W. This causes the thermal expansion of only thefront surface of the semiconductor wafer W to result in the abruptdeformation of the semiconductor wafer W. As a result, the semiconductorwafer W vibrates on the susceptor 74 to create particles, which in turnswirl up in the chamber 6.

To effectively discharging such particles resulting from the flashirradiation from the chamber 6, the second preferred embodiment performsthe following operation. When the nitrogen gas is supplied into thechamber 6 to return the pressure in the chamber 6 to the ordinarypressure Ps after the flash heating treatment, the valve 89 forexhausting the gas is opened, and the nitrogen gas is caused to flow ata flow rate in the range of 50 to 100 liters per minute in the chamber6, thereby sweeping away the particles resulting from the flashirradiation. This prevents the particles resulting from the flashirradiation from being deposited on and contaminating the semiconductorwafer W.

When the nitrogen gas is supplied into the chamber 6 to return thepressure in the chamber 6 to the ordinary pressure Ps after the flashheating treatment, the valve 84 for supplying the gas may be opened tosupply the nitrogen gas into the chamber 6 while the valve 89 forexhausting the gas is left open. This achieves more effective dischargeof the particles resulting from the flash irradiation from the chamber6.

In the second preferred embodiment, the pressure in the chamber 6 isreduced once to the pressure P1 lower than atmospheric pressure and thenreturned to the pressure P2 by supplying the nitrogen gas into thechamber 6, so that an oxygen concentration of not greater thanapproximately 200 ppb in the heat treatment space 65 of the chamber 6during the heat treatment for the formation of the silicide is achievedas in the first preferred embodiment. This suppresses the increase inresistance of the silicide resulting from the entry of oxygen in theheat treatment space 65 into the defects near the interface between themetal film 108 and the base material 101 during the process of silicideformation. Also, the oxidation of the silicide itself is prevented.

Also, the excessive increase in the thickness of the silicide issuppressed because the temperature of the front surface of thesemiconductor wafer W is increased to the treatment temperature T2 in anextremely short time by irradiating the front surface of thesemiconductor wafer W with a flash of light from the flash lamps FL fora time period of less than one second, as in the first preferredembodiment.

The heat treatment under a reduced pressure promotes the desorption ofimpurities contained in the metal film 108. By discharging such desorbedimpurity elements from the chamber 6, the impurities are prevented frombeing deposited again on and contaminating the front surface of thesemiconductor wafer W. As a result, this prevents the degradation ofdevice performance and the decrease in yield.

Also, the efficiency of temperature increase during the preheating andduring the flash heating is enhanced because the absorption of halogenlamp light and flashes of light by an atmosphere gas in the chamber 6 isreduced. As a result, this achieves the increase in attained surfacetemperature of the semiconductor wafer W during the flash heating.

The heating treatment of the semiconductor wafer W under a reducedpressure reduces the influence of convection in the chamber 6 to improvethe uniformity of the in-plane temperature distribution of thesemiconductor wafer W.

In the second preferred embodiment, the pressure in the chamber 6 is notreturned to the ordinary pressure Ps but is returned from the pressureP1 to the pressure P2 lower than atmospheric pressure. The return of thepressure in the chamber 6 to the pressure P2 as in the second preferredembodiment achieves the reduction in the time required for the pressurereturn, as compared with the return of the pressure in the chamber 6 tothe ordinary pressure Ps as in the first preferred embodiment. Themoment of the flash irradiation may be moved forward by the amount ofthe reduction in the time required for the pressure return (the time t7of the flash irradiation in the second preferred embodiment is earlierthan the time t5 of the flash irradiation in the first preferredembodiment). As a result, the return of the pressure in the chamber 6 tothe pressure P2 lower than atmospheric pressure as in the secondpreferred embodiment improves the throughput in the heat treatmentapparatus 1.

Third Preferred Embodiment

Next, a third preferred embodiment according to the present inventionwill be described. The heat treatment apparatus 1 of the third preferredembodiment is exactly identical in configuration with that of the firstpreferred embodiment. The procedure for treatment of the semiconductorwafer W in the heat treatment apparatus 1 of the third preferredembodiment is substantially similar to that of the first preferredembodiment. The third preferred embodiment differs from the firstpreferred embodiment in pressure changes in the chamber 6.

FIG. 12 is a graph showing changes in pressure in the chamber 6according to the third preferred embodiment. In FIG. 12, the abscissarepresents time, and the ordinate represents pressure in the chamber 6,as in FIG. 10.

At the point in time when the semiconductor wafer W with the metal film108 deposited thereon is received in the chamber 6 and the transportopening 66 is closed, the pressure in the chamber 6 is equal to theordinary pressure Ps (=atmospheric pressure=approximately 101325 Pa), asin the first preferred embodiment. Then, the reduction in pressure inthe chamber 6 starts at the time t1. In the third preferred embodiment,the exhaust flow rate in the three bypass lines 197, 198 and 199 is madeconstant, and the exhaust flow rate from the chamber 6 is continuouslyincreased with time by means of the flow regulating valve 196. That is,the exhausting of the gas starts at a relatively low exhaust flow ratein the early stage of the pressure reduction, and the exhaust flow rateis increased gradually continuously. This prevents particles in thechamber 6 from swirling up as in the first preferred embodiment. Also,increasing the exhaust flow rate in a continuous and stepless mannerprevents particles from swirling up due to abrupt changes in exhaustflow rate.

At the time t3 when the pressure in the chamber 6 reaches the pressureP1, the valve 89 for exhausting the gas is closed and the valve 84 forsupplying the gas is opened, so that the nitrogen gas is supplied fromthe gas supply source 85 into the heat treatment space 65 of the chamber6 to return the pressure in the chamber 6. The pressure P1 is, forexample, approximately 100 Pa.

In the third preferred embodiment, the supply flow rate of the treatmentgas to the chamber 6 is continuously increased with time by means of theflow regulating valve 90. That is, the supply of the gas starts at arelatively low supply flow rate in the early stage of the pressurereturn, and the supply flow rate is increased gradually continuously. Ifthe gas is supplied rapidly at a high supply flow rate at the start ofthe pressure return, there is a danger that particles deposited on thestructures of the chamber 6 swirls up, as in the case of the pressurereduction. When the supply of the gas starts at a relatively low supplyflow rate in the early stage of the pressure return and the supply flowrate is increased gradually, such particles in the chamber 6 areprevented from swirling up. Also, increasing the supply flow rate in acontinuous and stepless manner prevents particles from swirling up dueto abrupt changes in supply flow rate.

In the third preferred embodiment, the pressure in the chamber 6 isreturned to a pressure P3 exceeding the ordinary pressure Ps at time t8by supplying the nitrogen gas into the chamber 6. The pressure P3 ishigher than atmospheric pressure, and is approximately 0.12 MPa, forexample. In the third preferred embodiment, the pressure in the chamber6 is reduced once to the pressure P1 and then returned to the pressureP3 higher than the pressure P1. This achieves an oxygen concentration ofnot greater than approximately 200 ppb in the chamber 6 after thepressure return to the pressure P3.

After the time t8 when the pressure in the chamber 6 is returned to thepressure P3, the supply flow rate of the nitrogen gas to the chamber 6and the exhaust flow rate thereof from the chamber 6 are made equal toeach other, so that the pressure in the chamber 6 is maintained at thepressure P3. While the pressure in the chamber 6 is maintained at thepressure P3, the preheating of the semiconductor wafer W is performed bythe halogen lamps HL, and the flash heating is thereafter performed attime t9 by irradiating the front surface of the semiconductor wafer Wwith a flash of light from the flash lamps FL. The details of thepreheating and the flash heating treatment in the third preferredembodiment are identical with those in the first preferred embodiment.By irradiating the front surface of the semiconductor wafer W with themetal film 108 deposited thereon with the flash of light from the flashlamps FL, silicon in the source/drain regions and the metal film 108react with each other to form a silicide.

After the completion of the flash heating treatment, the gas in thechamber 6 is exhausted through the gas exhaust pipe 88, so that thepressure in the chamber 6 is equal to the ordinary pressure Ps. Thehalogen lamps HL turn off. This causes the temperature of thesemiconductor wafer W to decrease from the preheating temperature T1.The procedure for the subsequent transport of the semiconductor wafer Wthe temperature of which is decreased to a predetermined temperature outof the chamber 6 of the heat treatment apparatus 1 in the thirdpreferred embodiment is similar to that in the first preferredembodiment.

In the third preferred embodiment, the pressure in the chamber 6 isreduced once to the pressure P1 lower than atmospheric pressure and thenreturned to the pressure P3 by supplying the nitrogen gas into thechamber 6, so that an oxygen concentration of not greater thanapproximately 200 ppb in the heat treatment space 65 of the chamber 6during the heat treatment for the formation of the silicide is achievedas in the first preferred embodiment. This suppresses the increase inresistance of the silicide resulting from the entry of oxygen in theheat treatment space 65 into the defects near the interface between themetal film 108 and the base material 101 during the process of silicideformation. Also, the oxidation of the silicide itself is prevented.

Also, the excessive increase in the thickness of the silicide issuppressed because the temperature of the front surface of thesemiconductor wafer W is increased to the treatment temperature T2 in anextremely short time by irradiating the front surface of thesemiconductor wafer W with a flash of light from the flash lamps FL fora time period of less than one second, as in the first preferredembodiment.

In the third preferred embodiment, the heating treatment is performed byirradiating the front surface of the semiconductor wafer W with a flashof light, with the pressure in the chamber 6 maintained at the pressureP3 higher than atmospheric pressure, i.e. under an increased pressure.The heat treatment under an increased pressure lowers the diffusionvelocity of oxygen released from the chamber side portion 61 and thelike to restrain the oxygen from reaching the semiconductor wafer W.

In the third preferred embodiment, the exhaust flow rate and the supplyflow rate during the pressure reduction and the pressure return in thechamber 6 are changed in a stepless and continuous manner. This preventsparticles from swirling up due to abrupt changes in supplied andexhausted gas.

Fourth Preferred Embodiment

Next, a fourth preferred embodiment according to the present inventionwill be described. The heat treatment apparatus 1 of the fourthpreferred embodiment is exactly identical in configuration with that ofthe first preferred embodiment. The procedure for treatment of thesemiconductor wafer W in the heat treatment apparatus 1 of the fourthpreferred embodiment is substantially similar to that of the firstpreferred embodiment. The fourth preferred embodiment differs from thefirst preferred embodiment in pressure changes in the chamber 6.

FIG. 13 is a graph showing changes in pressure in the chamber 6according to the fourth preferred embodiment. In FIG. 13, the abscissarepresents time, and the ordinate represents pressure in the chamber 6,as in FIG. 10.

At the point in time when the semiconductor wafer W with the metal film108 deposited thereon is received in the chamber 6 and the transportopening 66 is closed, the pressure in the chamber 6 is equal to theordinary pressure Ps (=atmospheric pressure=approximately 101325 Pa), asin the first preferred embodiment. Then, the reduction in pressure inthe chamber 6 starts at the time t1. After the gas is exhausted at a lowexhaust flow rate in the early stage of the pressure reduction, theexhaust flow rate is changed to a higher exhaust flow rate at the timet2, and the gas is exhausted at the higher exhaust flow rate, as in thefirst preferred embodiment. This prevents particles in the chamber 6from swirling up.

At the time t3 when the pressure in the chamber 6 reaches the pressureP1, the valve 89 for exhausting the gas is closed. In the fourthpreferred embodiment, the pressure in the chamber 6 is maintained at thepressure P1 without introducing the nitrogen gas into the chamber 6. Thevalve 89 may be opened to continue exhausting the gas for the purpose ofmaintaining the pressure in the chamber 6 at the pressure P1.

In the fourth preferred embodiment, the pressure in the chamber 6 isreduced to the pressure P1 and is thereafter maintained at the pressureP1. This achieves a residual oxygen concentration of not greater thanapproximately 200 ppb in the chamber 6. While the pressure in thechamber 6 is maintained at the pressure P1, the preheating of thesemiconductor wafer W is performed by the halogen lamps HL, and theflash heating is thereafter performed at time t10 by irradiating thefront surface of the semiconductor wafer W with a flash of light fromthe flash lamps FL. The details of the preheating and the flash heatingtreatment in the fourth preferred embodiment are identical with those inthe first preferred embodiment. By irradiating the front surface of thesemiconductor wafer W with the metal film 108 deposited thereon with theflash of light from the flash lamps FL, silicon in the source/drainregions and the metal film 108 react with each other to form a silicide.

After a predetermined time period has elapsed since the completion ofthe flash heating treatment, the valve 84 for supplying the gas isopened, so that the nitrogen gas is supplied from the gas supply source85 into the chamber 6 to return the pressure in the chamber 6 to theordinary pressure Ps. The halogen lamps HL turn off. This causes thetemperature of the semiconductor wafer W to decrease from the preheatingtemperature T1. The procedure for the subsequent transport of thesemiconductor wafer W the temperature of which is decreased to apredetermined temperature out of the chamber 6 of the heat treatmentapparatus 1 in the fourth preferred embodiment is similar to that in thefirst preferred embodiment.

In the fourth preferred embodiment, the pressure in the chamber 6 isreduced once to the pressure P1 lower than atmospheric pressure and thenmaintained at the pressure P1, so that an oxygen concentration of notgreater than approximately 200 ppb in the heat treatment space 65 of thechamber 6 during the heat treatment for the formation of the silicide isachieved as in the first preferred embodiment. This suppresses theincrease in resistance of the silicide resulting from the entry ofoxygen in the heat treatment space 65 into the defects near theinterface between the metal film 108 and the base material 101 duringthe process of silicide formation. Also, the oxidation of the silicideitself is prevented.

Also, the excessive increase in the thickness of the silicide issuppressed because the temperature of the front surface of thesemiconductor wafer W is increased to the treatment temperature T2 in anextremely short time by irradiating the front surface of thesemiconductor wafer W with a flash of light from the flash lamps FL fora time period of less than one second, as in the first preferredembodiment.

The heat treatment of the semiconductor wafer W is performed under areduced pressure in the fourth preferred embodiment to produce effectssimilar to those of the second preferred embodiment. Further, if themetal film 108 is made of titanium, there is a danger that the metalfilm 108 is nitrided when the heat treatment is performed in a nitrogenatmosphere. However, the heat treatment of the semiconductor wafer Wunder an extremely low pressure as in the fourth preferred embodimentsuppresses the nitriding of the metal film 108.

<Modifications>

While the preferred embodiments according to the present invention havebeen described hereinabove, various modifications of the presentinvention in addition to those described above may be made withoutdeparting from the scope and spirit of the invention. For example, thepressure P1 that is the pressure to be attained during the pressurereduction in the chamber 6 is approximately 100 Pa in the aforementionedpreferred embodiments, but is not limited to this. The pressure P1 maytake any appropriate value. To decrease the oxygen concentration to beattained in the chamber 6 to approximately one tenth, it is sufficientthat the pressure P1 that is the pressure to be attained during thepressure reduction in the chamber 6 is approximately one tenth(approximately 10000 Pa) of atmospheric pressure. Making the pressure P1lower (i.e., reducing the pressure to a higher vacuum) achieves thelower oxygen concentration remaining in the chamber 6 after the pressurereturn, but requires longer time to reduce the pressure to the pressureP1. It is therefore preferable that the pressure P1 is set inconsideration for a balance between the oxygen concentration requiredfor the execution of the heat treatment for silicide formation and thethroughput.

In the aforementioned preferred embodiments, the three bypass lines 197,198 and 199 are provided to control the exhaust flow rate from thechamber 6. However, the number of bypass lines may be not less than one.The exhaust flow rate from the chamber 6 may be controlled by providinga throttle valve or a gas ballast in place of providing the plurality ofbypass lines 197, 198 and 199. Also, a mass flow controller may be usedin place of the flow regulating valves 90 and 196.

The exhaust flow rate from the chamber 6 during the pressure reductionis changed in two levels in the first and second preferred embodiments,and the exhaust flow rate is increased in a stepless and continuousmanner in the third preferred embodiment. The present invention,however, is not limited to these. For example, the exhaust flow rate maybe changed in multiple levels. That is, it is only necessary that theexhaust flow rate during the reduction in pressure in the chamber 6 isincreased with time.

Similarly, the supply flow rate to the chamber 6 during the pressurereturn is increased in a stepless and continuous manner in the thirdpreferred embodiment. However, the supply flow rate to the chamber 6during the pressure return may be changed in two levels or in multiplelevels to increase. That is, it is only necessary that the supply flowrate during the return of pressure in the chamber 6 is increased withtime.

For the reduction and return of the pressure in the chamber 6, thecontroller 3 may control the valves and the like based on the amount oftime elapsed from the start (the time t1) of the pressure reduction ormay effect feedback control of the valves and the like based on theresult of measurement of the pressure in the heat treatment space 65 bymeans of the pressure gauge 180. For the control based on the elapsedtime, a relationship between the elapsed time and the pressure in thechamber 6 should be determined by experiment or by simulation.

In the aforementioned preferred embodiments, the silicide is formed bydepositing the metal film 108 on the base material 101 of silicon. Thebase material 101, however, need not be made of silicon, but may be madeof germanium (Ge) or silicon-germanium. In particular, silicon-germaniumis used as the base material 101 for the manufacture of PMOStransistors. When the base material 101 is made of germanium orsilicon-germanium, the metal film 108 is deposited on the base material101, so that germanium and the metal react with each other to form agermanide. The treatment performed on the semiconductor wafer W issimilar to that in the aforementioned preferred embodiments even whenthe base material 101 is made of germanium or silicon-germanium.

The aforementioned preferred embodiments are intended to suppress theincrease in resistance of the silicide. The technique according to thepresent invention, however, may be applied to the reduction in contactresistance in a Fin structure. In the Fin structure, a metal film (forexample, a film of TiN) for the formation of a contact is deposited on apartial region (the opening of a contact hole) of the base material 101.The technique according to the present invention may be applied to theformation of a contact (ohmic contact) between the metal film and thebase material 101 to perform heat treatment at an extremely low oxygenconcentration, thereby reducing the contact resistance.

Although the 30 flash lamps FL are provided in the flash heating part 5according to the aforementioned preferred embodiments, the presentinvention is not limited to this. Any number of flash lamps FL may beprovided. The flash lamps FL are not limited to the xenon flash lamps,but may be krypton flash lamps. Also, the number of halogen lamps HLprovided in the halogen heating part 4 is not limited to 40. Any numberof halogen lamps HL may be provided so long as the halogen lamps HL arearranged in upper and lower tiers.

Also, in the aforementioned preferred embodiments, the semiconductorwafer W is preheated by irradiating the semiconductor wafer W withhalogen light from the halogen lamps HL. The technique for preheating isnot limited to this, but the semiconductor wafer W may be preheated byplacing the semiconductor wafer W on a hot plate.

While the invention has been described in detail, the foregoingdescription is in all aspects illustrative and not restrictive. It isunderstood that numerous other modifications and variations can bedevised without departing from the scope of the invention.

What is claimed is:
 1. A method of irradiating a substrate with a flashof light to form a contact in a Fin structure, comprising the steps of:(a) transporting a substrate with a metal film deposited thereon into achamber; (b) reducing the pressure in said chamber to a first pressurelower than atmospheric pressure; (c) returning the pressure in saidchamber from the first pressure to a second pressure higher than thefirst pressure; and (d) irradiating a front surface of said substratewith a flash of light from a flash lamp while maintaining the pressurein said chamber at the second pressure in a manner effective to obtainsaid contact in said Fin structure.
 2. The method according to claim 1,wherein the second pressure is higher than the first pressure and lowerthan atmospheric pressure.
 3. The method according to claim 1, whereinthe second pressure is equal to atmospheric pressure.
 4. The methodaccording to claim 1, wherein the second pressure is higher thanatmospheric pressure.
 5. The method according to claim 1, wherein anexhaust flow rate from said chamber is increased with time in said step(b).
 6. The method according to claim 1, wherein a supply flow rate tosaid chamber is increased with time in said step (c).
 7. The methodaccording to claim 1, wherein an inert gas is caused to flow at a flowrate ranging from 50 to 100 liters per minute in said chamber, with thepressure in said chamber maintained at atmospheric pressure, after saidstep (d).
 8. The method according to claim 1, wherein an inert gas issupplied into said chamber while a transport opening of said chamber isopened in said step (a).